| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Betavoltaic Battery Conversion Efficiency Improvement Based on Interlayer Structures |
| LI Da-Rang1, JIANG Lan1**, YIN Jian-Hua1, TAN Yuan-Yuan2, LIN Nai1 |
1Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081
2National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083 |
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| Cite this article: |
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LI Da-Rang, JIANG Lan, YIN Jian-Hua et al 2012 Chin. Phys. Lett. 29 078102 |
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Abstract Significant differences among the doping densities of PN junctions in semiconductors cause lattice mismatch and lattice defects that increase the recombination current of betavoltaic batteries. This extensively decreases the open circuit voltage and the short current, which results in low conversion efficiency. This study proposes P+PINN+-structure based betavoltaic batteries by adding an interlayer to typical PIN structures to improve conversion efficiency. Numerical simulations are conducted for the energy deposition of beta particles along the thickness direction in semiconductors. Based on this, 63Ni-radiation GaAs batteries with PIN and P+PINN+ structures are designed and fabricated to experimentally verify the proposed design. It turns out that the conversion efficiency of the betavoltaic battery with the proposed P+PINN+ structure is about 1.45 times higher than that with the traditional PIN structure.
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Received: 21 March 2012
Published: 29 July 2012
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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07.10.Cm
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(Micromechanical devices and systems)
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