| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Influence of Temperature and Frequency on Dielectric Permittivity and ac Conductivity of Au/SnO2/n-Si (MOS) Structures |
| R. Ertuğrul, A. Tataroğlu* |
| Department of Physics, Faculty of Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey |
|
| Cite this article: |
|
R. Ertuğ, rul, A. Tataroğ et al 2012 Chin. Phys. Lett. 29 077304 |
|
|
|
|
Abstract The complex dielectric permittivity (ϵ∗=ϵ'-jϵ") and ac conductivity (σac) of Au/SnO2/n-Si (MOS) structures are studied using capacitance (C) and conductance (G(ω)) measurements in a wide temperature range of 125–400 K for six different frequency values. It is observed that the C and G(ω) values decrease with the increasing frequency, while they increase with the increasing temperature. The observed nature of the C is due to the inability of the dipoles to orient in a rapidly varying electric field. The experimental values of the dielectric constant ϵ', dielectric loss ϵ", loss tangent tanδ and σac are found to be strong functions of frequency and temperature. The values of the ϵ' and ϵ" are found to decrease with the increasing frequency and increase with the increasing temperature. The σac is found to increase with the increasing frequency and temperature. Activation energy (Ea), from the Arrhenius plot, is studied to discuss the conduction mechanism in a MOS structure.
|
|
|
Received: 20 March 2012
Published: 29 July 2012
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
77.22.Ch
|
(Permittivity (dielectric function))
|
| |
72.20.-i
|
(Conductivity phenomena in semiconductors and insulators)
|
|
|
|
|
|
[1] Sze S M and Kwok K Ng 2007 Physics of Semiconductor Devices 3rd edn (New Jersey: John Wiley & Sons) pp 198-236
[2] Nicollian E H and Goetzberger A 1967 Appl. Phys. Lett. 10 60
[3] Pakma O, Serin N, Serin T and Alt?ndal ? 2008 J. Phys. D: Appl. Phys. 41 215103
[4] Tataro?lu A, Alt?ndal ? and Bülbül M M 2005 Microelectron. Eng. 81 140
[5] Tataro?lu A and Alt?ndal ? 2008 Microelectron. Eng. 85 1866
[6] Chattopadhyay P 1994 Solid-State Electron. 37 1759
[7] Fonash S J 1983 J. Appl. Phys. 54 1966
[8] Munnix S and Schmeits M 1983 Phys. Rev. B 27 7624
[9] G?pel W and Schierbaum K D 1995 Sensors Actuators B 26-27 1
[10] Li P G, Guo X, Wang X F and Tang W H 2009 J. Alloys Compd. 479 74
[11] Nicollian E H and Goetzberger A 1965 Appl. Phys. Lett. 7 216
[12] Losee D L 1975 J. Appl. Phys. 46 2204
[13] D?kme ?, Alt?ndal ? Tun? T and Uslu ? 2010 Microelectron. Reliability 50 39
[14] Kar S, Panchal K M, Bhattacharya S and Varma S 1982 IEEE Trans. Electron. Devices 29 1839
[15] Kannan M D, Narayandass S K, Balasubramanian C and Mangalaraj D 1990 Phys. Stat. Sol. A 121 515
[16] Matheswaran P, Sathyamoorthy R, Saravanakumar R and Velumani S 2010 Mater. Sci. Eng. B 174 269
[17] Prabakar K, Narayandass S K and Mangalaraj D 2003 Phys. Status Solidi A 199 507
[18] Szatkowski J and Sierański K 1992 Solid-State Electron. 35 1013
[19] Ero?lu A, Tataro?lu A and Alt?ndal ? 2012 Microelectron. Eng. 91 154
[20] Afandiyeva I M, Bülbül M M, Alt?ndal ? and Bengi S 2012 Microelectron. Eng. 93 50
[21] Abdel Kader M M, Elzayat M Y, Hammad T R, Aboud A I and Abdelmonem H 2011 Phys. Scr. 83 035705
[22] Tataro?lu A, Yüceda? í and Alt?ndal ? 2008 Microelectron. Eng. 85 1518
[23] Tataro?lu A 2006 Microelectron. Eng. 83 2551
[24] Karata? ? 2008 J. Non-Cryst. Solids 354 3606
[25] Sattar A A and Rahman S A 2003 Phys. Stat. Sol. A 200 415
[26] D?kme ?, Y ?ld?z D E and Alt?ndal ? 2012 Adv. Polym. Tech. 31 63
[27] Maity S, Bhattacharya D and Ray S K 2011 J. Phys. D: Appl. Phys. 44 095403
[28] Szu S P and Lin C Y 2003 Mater. Chem. Phys. 82 295
[29] Maurya D, Kumar J and Shripal 2005 J. Phys. Chem. Solids 66 1614
[30] Migahed M D, Ishra M, Fahmy T and Barakat A 2004 J. Phys. Chem. Solids 65 1121
[31] Elkestawy M A, Abdel Kader S and Amer M A 2010 Physica B 405 619
[32] Kim J S, Lee H J, Lee S Y, Kim I W and Lee S D 2010 Thin Solid Films 518 6390
[33] Dutta A and Sinha T P 2011 Matter. Res. Bull. 46 518
[34] Kumar M P, Sankarappa T, Devidas G B and Sadashivaiah P J 2009 Mater. Sci. Eng. 2 012050
[35] Karata? ? and Kara Z 2011 Microelectron. Reliability 51 2205
[36] Singh V, Kulkarni A R and Mohan T R 2003 J. Appl. Polym. Sci. 90 3602
[37] Yahia I S, Abd El-sadek M S and Yakuphano?lu F 2012 Dyes Pigments 93 1434
[38] Louati B, Hlel F and Guidara K 2009 J. Alloys Compd. 486 299
[39] Hegab N A, Afifi M A, Atyia H E and Farid A S 2009 J. Alloys Compd. 477 925
[40] Farid A M, Atyia H E and Hegab N A 2005 Vacuum 80 284
[41] Jonscher A K 1977 Nature 267 673
[42] Singh N, Agarwal A and Sanghi S 2011 Current Appl. Phys. 11 783
[43] Kumar P, Singh B P, Sinha T P and Singh N K 2011 Physica B 406 139
[44] Wang J, Zhang H, Xue D and Li Z 2009 J. Phys. D: Appl. Phys. 42 235103 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
