Chin. Phys. Lett.  2012, Vol. 29 Issue (7): 077301    DOI: 10.1088/0256-307X/29/7/077301
Low Bias Negative Differential Resistance with Large Peak-to-Valley Ratio in a BDC60 Junction
REN Hua1, LIANG Wei1, ZHAO Peng1**, LIU De-Sheng2,3
1School of Physics and Technology, University of Jinan, Jinan 250022
2School of Physics, Shandong University, Jinan 250100
3Department of Physics, Jining University, Qufu 273155
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REN Hua, LIANG Wei, ZHAO Peng et al  2012 Chin. Phys. Lett. 29 077301
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Abstract Based on nonequilibrium Green's function method and density functional theory calculations, we investigate theoretically the electronic transport properties of 1,4-bis(fullero[c]pyrrolidinl-yl)benzene (BDC60). A low bias negative differential resistance with the peak-to-valley ratio as high as 305.41 is obtained. The observed negative differential resistance is explained in terms of the evolution of the transmission spectra, molecular projected self-consistent Hamiltonian states and molecular projected energy levels with applied bias.
Received: 21 March 2012      Published: 29 July 2012
PACS:  73.23.-b (Electronic transport in mesoscopic systems)  
  85.65.+h (Molecular electronic devices)  
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