| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs |
| LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1 |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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LI Li-Gong, LIU Shu-Man, LUO Shuai et al 2012 Chin. Phys. Lett. 29 076801 |
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Abstract InAs/GaSb type-II superlattices (SLs), Zn-doped GaSb and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition. X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples. The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is p∝[DEZn]0.57. The electron concentration in InAs does not show good linearity with the SiH4 flow rate. The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases, while the growth rate of the n-InAs epilayer is weakly dependent on the SiH4 flow rate.
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Received: 23 February 2012
Published: 29 July 2012
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| PACS: |
68.65.Cd
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(Superlattices)
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63.22.-m
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(Phonons or vibrational states in low-dimensional structures and nanoscale materials)
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73.61.Ey
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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