| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors |
| HUANG Xiao-Ming1, WU Chen-Fei1, LU Hai1**, XU Qing-Yu2, ZHANG Rong1, ZHENG You-Dou1 |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Department of Physics, Southeast University, Nanjing 211189 |
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| Cite this article: |
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HUANG Xiao-Ming, WU Chen-Fei, LU Hai et al 2012 Chin. Phys. Lett. 29 067302 |
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Abstract The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress. With increasing stress time, the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons. The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface, which is confirmed by photo-excited charge-collection spectroscopy measurement.
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Received: 26 December 2011
Published: 31 May 2012
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| PACS: |
73.61.Jc
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(Amorphous semiconductors; glasses)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.20.At
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(Surface states, band structure, electron density of states)
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