| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Substitution for the High-k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure |
| KONG Yue-Chan**,XUE Fang-Shi,ZHOU Jian-Jun,LI Liang,CHEN Chen,JIANG Wen-Hai |
| Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| Cite this article: |
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KONG Yue-Chan**, XUE Fang-Shi, ZHOU Jian-Jun et al 2012 Chin. Phys. Lett. 29 057702 |
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Abstract Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal−insulator-semiconductor (MIS) field-effect transistors. Its superior potential for improving device transconductance is due to its unique switchable polar nature. By self-consistent calculation involving the switchable polarization of the paraelectric, the 2DEG properties and C–V characteristics are investigated and compared for the novel AlGaN/GaN metal−paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS structure. It is shown that owing to the paraelectric polarization, the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold voltage. The self-consistent polarization of the paraelectric in the MPS structure is non-linearly dependent on the saturated polarization, which implies an optimum saturated polarization of 5–10 µC/cm2 for the paraelectric.
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| Keywords:
77.90.+k
73.40.Qv
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Received: 15 January 2012
Published: 30 April 2012
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| PACS: |
77.90.+k
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(Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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