| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction |
| GAO Jun-Ning1,JIE Wan-Qi1**,YUAN Yan-Yan1,ZHA Gang-Qiang1,XU Ling-Yan1,WU Heng1,WANG Ya-Bin1,YU Hui1,ZHU Jun-Fa2 |
1State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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GAO Jun-Ning, JIE Wan-Qi, YUAN Yan-Yan et al 2012 Chin. Phys. Lett. 29 057301 |
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Abstract The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔEV is calculated to be 0.65 eV and the conduction band offset ΔEC is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.
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Received: 27 February 2012
Published: 30 April 2012
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ga
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(II-VI semiconductors)
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