| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Solid Phase Reactions of Ni-GaAs Alloys for High Mobility III–V MOSFET Applications |
| LU Li,CHANG Hu-Dong,SUN Bing,WANG Hong,XUE Bai-Qing,ZHAO Wei,LIU Hong-Gang** |
| Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
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| Cite this article: |
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LU Li, CHANG Hu-Dong, SUN Bing et al 2012 Chin. Phys. Lett. 29 046802 |
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Abstract The solid phase reactions of Ni with GaAs substrates are investigated. The experimental results reveal that the Ni-GaAs solid phase reaction forms a ternary phase of Ni2GaAs when annealing temperatures are in the range 250–300°C. As the annealing temperature increases to 400°C, the Ni2GaAs phase starts to decompose due to NiAs phase precipitation. Ni−GaAs alloys processed at 400°C with a 3 min annealing time demonstrate a sheet resistance of 30 Ω/square after unreacted Ni removal in hot diluted−HCl solutions. Therefore, Ni-GaAs alloys formed by solid phase reaction could be promising metallic source/drain structures with significant low series resistance for high mobility III–V metal-oxide-semiconductor field effect transistor (MOSFET) applications.
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Received: 13 December 2011
Published: 04 April 2012
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