| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors |
| XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang** |
| Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
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| Cite this article: |
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XUE Bai-Qing, CHANG Hu-Dong, SUN Bing et al 2012 Chin. Phys. Lett. 29 046801 |
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Abstract Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al2O3/Ge metal−oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH4)2S passivation show less frequency dispersion than the HF pre−cleaning and (NH4)2S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality.
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Received: 14 November 2011
Published: 04 April 2012
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| PACS: |
68.35.Ct
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(Interface structure and roughness)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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