| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A 171.4 W Diode-Side-Pumped Q-Switched 2 µm Tm:YAG Laser with a 10 kHz Repetition Rate |
| CAO Dong1,2,DU Shi-Feng1**,PENG Qin-Jun1,BO Yong1,XU Jia-Lin1,GUO Ya-Ding1,ZHANG Jing-Yuan1,CUI Da-Fu1,XU Zu-Yan1 |
1RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190
2Graduate University of the Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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CAO Dong, DU Shi-Feng, PENG Qin-Jun et al 2012 Chin. Phys. Lett. 29 044210 |
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Abstract A 785 nm diode-side-pumped high-power high-pulse-repetition-frequency Q-switched 2 µm Tm:YAG laser system is reported. Under a pump power of 1300 W, a 171.4 W average output power is achieved at a pulse repetition frequency of 10 kHz. To our knowledge, this is the highest average output power for a diode−pumped all solid-state Q-switched 2 µm Tm:YAG laser. The laser output corresponds to an optical-to-optical conversion efficiency of 13.3% and a slope efficiency of 18.9%.
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Received: 05 January 2012
Published: 04 April 2012
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| PACS: |
42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.55.Xi
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(Diode-pumped lasers)
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42.60.Gd
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(Q-switching)
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