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Temperature Uniformity of Wafer on a Large-Sized Susceptor for a Nitride Vertical MOCVD Reactor |
| LI Zhi-Ming1**, JIANG Hai-Ying1, HAN Yan-Bin1, LI Jin-Ping1, YIN Jian-Qin1, ZHANG Jin-Cheng2 |
1Shandong Provincial Key Laboratory of Network-Based Intelligent Computing, School of Information Science and Engineering, University of Ji'nan, Ji'nan 250022
2Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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LI Zhi-Ming, JIANG Hai-Ying, HAN Yan-Bin et al 2012 Chin. Phys. Lett. 29 030701 |
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Abstract The effect of coil location on wafer temperature is analyzed in a vertical MOCVD reactor by induction heating. It is observed that the temperature distribution in the wafer with the coils under the graphite susceptor is more uniform than that with the coils around the outside wall of the reactor. For the case of coils under the susceptor, we find that the thickness of the susceptor, the distance from the coils to the susceptor bottom and the coil turns significantly affect the temperature uniformity of the wafer. An optimization process is executed for a 3-inch susceptor with this kind of structure, resulting in a large improvement in the temperature uniformity. A further optimization demonstrates that the new susceptor structure is also suitable for either multiple wafers or large-sized wafers approaching 6 and 8 inches.
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07.20.Hy
02.60.Cb
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Received: 25 June 2011
Published: 11 March 2012
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| PACS: |
07.20.Hy
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(Furnaces; heaters)
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02.60.Cb
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(Numerical simulation; solution of equations)
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