Chin. Phys. Lett.  2012, Vol. 29 Issue (2): 027302    DOI: 10.1088/0256-307X/29/2/027302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Alternating-Current Transport Properties of the Interface between Nd0.7Sr0.3MnO3 Ceramic and a Ag Electrode
CHEN Shun-Sheng1,2, YANG Chang-Ping1,5**, LUO Xiao-Jing1, Bärner K.3, Medvedeva I. V.4
1Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062
2Faculty of Mathematics and Physics, Huangshi Institute of Technology, Huangshi 435003
3Department of Physics, University of Göttingen, Tammanstrasse 1-37077 Göttingen, Germany
4Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg 620219, Russia
5State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004
Cite this article:   
YANG Chang-Ping, Medvedeva I. V., LUO Xiao-Jing et al  2012 Chin. Phys. Lett. 29 027302
Download: PDF(1987KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Electrical transport properties of the interface between a Nd0.7Sr0.3MnO3 ceramic and a Ag electrode are investigated using the ac impedance over a wide temperature and frequency ranges. The ac impedance measurements give the compressed semicircle arcs at different temperatures, which are used for the analysis of different contributions to electrical transport based on an electrical equivalent circuit. A significant interface-dependent electroresistance effect of 530% is clearly developed around the metal-insulator transition temperature 130 K, which is confirmed as the interface-layer dependent Curie temperature by the plot of interfacial conductance with frequency at different temperatures.
Keywords: 73.40.Cg      73.20.-r     
Received: 06 October 2011      Published: 11 March 2012
PACS:  73.40.Cg (Contact resistance, contact potential)  
  73.20.-r (Electron states at surfaces and interfaces)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/29/2/027302       OR      https://cpl.iphy.ac.cn/Y2012/V29/I2/027302
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
YANG Chang-Ping
Medvedeva I. V.
LUO Xiao-Jing
CHEN Shun-Sheng
Bärner K.
[1] Van de Krol R and Tuller H L 2002 Solid State Ionics 150 167
[2] Klein A, Säuberlich F, Späth B, Schulmeyer T and Kraft D 2007 J. Mater. Sci. 42 1890
[3] Tiefenbacher S, Pettenkofer C and Jaegermann W 2002 J. Appl. Phys. 91 1984
[4] Rüggeber g F and Klein A 2006 Appl. Phys. A 82 281
[5] Körber C, Harvey S P, Mason T O and Klein A 2008 Surf. Sci. 602 3246
[6] Gassenbauer Y, Wachau A and Klein A 2009 Phys. Chem. Chem. Phys. 11 3049
[7] Maier J 2009 Phys. Chem. Chem. Phys. 11 3011
[8] Nakasaka T, Urago K, Sugiura M and Kobayashi T 2001 Jpn. J. Appl. Phys. II 40 L518
[9] Oka T and Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[10] Shang D S, Wang Q, Chen L D, Dong R, Li X M and Zhang W Q 2006 Phys. Rev. B 73 245427
[11] Quintero M, Levy P, Leyva A G and Rozenberg M J 2007 Phys. Rev. Lett. 98 116601
[12] Dong R, Wang Q, Chen L D, Shang D S, Chen T L, Li X M and Zhang W Q 2005 Appl. Phys. Lett. 86 172107
[13] Baikalo A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y and Chu C W 2003 Appl. Phys. Lett. 83 957
[14] Sawa A, Fujii T, Kawasaki M and Tokura Y 2004 Appl. Phys. Lett. 85 4073
[15] Ohkubo I, Tsubouchi K, Harada T, Kumigashira H, Itaka K, Matsumoto Y, Ohnishi T, Lippmaa M, Koinuma H and Oshima M 2008 Mater. Sci. Eng. B 148 13
[16] Yang C P, Chen S S, Dai Q, Guo D H and Wang H 2007 Acta. Phys. Sin. 56 4908
[17] Ying Y, Fan J Y, Pi L, Hong B, Tan S and Zhang Y H 2007 Solid State Commun. 144 300
[18] Yang C P, Morchshakov V, Huang Y L, Troyanchuk I O and Bärner K 2003 Physica B 337 287
[19] Nadeem M, Akhtar M J, Khan A Y, Shaheen R and Haque M N 2002 Chem. Phys. Lett. 366 433
[20] Hu J and Qin H 2001 J. Magn. Magn. Mater. 231 L1
[21] Nadeem M, Akhtar M J and Khan A Y 2005 Solid State Commun. 134 431
[22] Hu J and Qin H 2001 Mater. Trans. 42 1790
[23] Rahmouni H, Nouiri M, Jemai R, Kallel N, Rzigua F, Selmi A, Khirouni K and Alaya S 2007 J. Magn. Magn. Mater. 316 23
[24] Chen S S, Yang C P, Deng H and Sun Z G 2008 Acta Phys. Sin. 57 3798
[25] Pradhan Dillip K, Samantaray B K, Choudhary R N P and Thakur Awalendra K 2005 Mater. Sci. Eng. B 116 7
[26] Sen S and Chaudhary R N P 2004 Mater. Chem. Phys. 87 256
[27] Hu J and Qin H 2001 J. Magn. Magn. Mater. 234 419
[28] Tsui S, Baikalov A, Cmaidalka J, Sun Y Y, Wang Y Q, Xue Y Y, Chu C W, Chen L and Jacobson A J 2004 Appl. Phys. Lett. 85 317
[29] Peláiz Barranco A, Gutiérrez Amador M P, Huanosta A and Valenzuela R 1998 Appl. Phys. Lett. 73 2039
[30] Jonscher A K 1977 Nature 276 673
Related articles from Frontiers Journals
[1] ZENG Chang, ZHANG Shu-Ming**, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. Chin. Phys. Lett., 2012, 29(1): 027302
[2] LIU Yan, AO Zhi-Min**, WANG Tao**, WANG Wen-Bo, SHENG Kuang, YU Bin, . Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 027302
[3] CHANG Hong, **, ZHAO Yong-Gang . Enhanced Magnetic and Ferroelectric Properties and Current-Voltage Hysteresis by Addition of La and Ti to BiFeO3 on 0.7%Nb−SrTiO3[J]. Chin. Phys. Lett., 2011, 28(6): 027302
[4] SHI Yan-Li, MEI Feng, YU Ya-Fei, ZHANG Zhi-Ming** . Controlled Phase Gate Based on an Electron Floating on Helium[J]. Chin. Phys. Lett., 2011, 28(5): 027302
[5] ZHAO Geng, CHENG Xiao-Man, **, TIAN Hai-Jun, DU Bo-Qun, LIANG Xiao-Yu . Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer[J]. Chin. Phys. Lett., 2011, 28(12): 027302
[6] PANG Fei, YIN Shu-Li, LIANG Xue-Jin, CHEN Dong-Min . Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111)[J]. Chin. Phys. Lett., 2010, 27(10): 027302
[7] LU Xiao-Hong, SUN Jiu-Xun, GUO Yang, ZHANG Da. Potential-Dependent Generalized Einstein Relation in Disordered Organic Semiconductors[J]. Chin. Phys. Lett., 2009, 26(8): 027302
[8] AN Xia, FAN Chun-Hui, HUANG Ru, ZHANG Xing. Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique[J]. Chin. Phys. Lett., 2009, 26(8): 027302
[9] GENG Li, MAGYARI-KOPE Blanka, ZHANG Zhi-Yong, NISHI Yoshio. Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface[J]. Chin. Phys. Lett., 2009, 26(3): 027302
[10] HU Zi-Yang, CHENG Xiao-Man, , WU Ren-Lei, WANG Zhong-Qiang, YIN Shou-Gen,. Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces[J]. Chin. Phys. Lett., 2009, 26(3): 027302
[11] LU Hong-Yan, WANG Qiang-Hua. Electronic Raman Scattering in Graphene[J]. Chin. Phys. Lett., 2008, 25(10): 027302
[12] WU Qi-Hui, THISSEN Andreas, JAEGERMANN Wolfram. Photoemission Spectroscopy and Electronic Structures of LiMn2O4[J]. Chin. Phys. Lett., 2006, 23(8): 027302
[13] ZHANG Hui, ZHANG Guo-Ying, LI Xing. Total Structural Energy of Top-Site-Adsorbed CO/Nix--Cu1-x Systems[J]. Chin. Phys. Lett., 2005, 22(3): 027302
[14] LEI Huan, LIU Ci-Hui, LIN Bi-Xia, FU Zhu-Xi,. Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction[J]. Chin. Phys. Lett., 2005, 22(1): 027302
[15] LI Xiu-Ping, YAN Wei-Xian,. Coherent Excitonic Wavepackets in Two-Dimensional Square Dot Arrays Driven by an In-Plane Uniform Electric Field[J]. Chin. Phys. Lett., 2004, 21(1): 027302
Viewed
Full text


Abstract