| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions |
| GAO Xi-Li1,2, ZHANG Xiao-Zhong1,2**, WAN Cai-Hua1,2, WANG Ji-Min1,2 |
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084
2National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084
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| Cite this article: |
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ZHANG Xiao-Zhong, WANG Ji-Min, WAN Cai-Hua et al 2012 Chin. Phys. Lett. 29 027102 |
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Abstract Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated. For reverse applied voltages, a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages. After the excitation of repeated high reverse applied voltages, the current-voltage curves show obvious hysteresis behaviors at low temperatures. These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 104.
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| Keywords:
71.23.Cq
73.61.Jc
73.50.Fq
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Received: 23 November 2011
Published: 11 March 2012
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| PACS: |
71.23.Cq
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(Amorphous semiconductors, metallic glasses, glasses)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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73.50.Fq
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(High-field and nonlinear effects)
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