Chin. Phys. Lett.  2012, Vol. 29 Issue (2): 026101    DOI: 10.1088/0256-307X/29/2/026101
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling
CHENG Feng-Feng1 , FA Tao1, WANG Xin-Qiang2, YAO Shu-De1**
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871
2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
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YAO Shu-De, WANG Xin-Qiang, FA Tao et al  2012 Chin. Phys. Lett. 29 026101
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Abstract Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm −thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield χmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR−XRD results, we obtain the values of the screw and edge densities to be ρscrew=7.0027×109 and ρedge=8.6115×109 cm−2, respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |e/e|| |=0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis, where e|| is the parallel elastic strain, and e is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.
Keywords: 61.05.cp      61.85.+p      68.55.-a      81.05.Ea     
Received: 15 September 2011      Published: 11 March 2012
PACS:  61.05.cp (X-ray diffraction)  
  61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?)  
  68.55.-a (Thin film structure and morphology)  
  81.05.Ea (III-V semiconductors)  
  82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/2/026101       OR      https://cpl.iphy.ac.cn/Y2012/V29/I2/026101
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YAO Shu-De
WANG Xin-Qiang
FA Tao
CHENG Feng-Feng
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