The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method

doi:10.1088/0256-307X/29/12/128501

Chin. Phys. Lett.

2012, Vol. 29

Issue (12): 128501 DOI: 10.1088/0256-307X/29/12/128501

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

The Structural and Electrical Properties of Al/Pb(Zr_0.52Ti_0.48)O₃/Al₂O₃/Si with an Al₂O₃ Layer Prepared by using the Molecular Atomic Deposition Method

YANG Yi¹, ZHOU Chang-Jian¹, PENG Ping-Gang¹, XIE Dan¹, REN Tian-Ling^1**, PAN Xiao², LIU Jing-Song³

¹Tsinghua National Laboratory for Information Science and Technology & Institute of Microelectronics, Tsinghua University, Beijing 100084
²Department of Applied Physics, Yale University, New Haven CT, 06520, USA
³State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010

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YANG Yi, ZHOU Chang-Jian, PENG Ping-Gang et al 2012 Chin. Phys. Lett. 29 128501

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Abstract The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al₂O₃ layer prepared by using the molecular atomic deposition method and Pb(Zr_0.52Ti_0.48)O₃ (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to ±40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42×10^?7 A/cm² and 8.28×10^?7 A/cm² are obtained under sweep voltages of ±5 V and ±20 V, respectively.

Received: 10 August 2012 Published: 04 March 2013

PACS:	85.50.Gk	(Non-volatile ferroelectric memories)
	77.55.hj	(PZT)
	81.15.Lm	(Liquid phase epitaxy; deposition from liquid phases (melts, solutions, And surface layers on liquids))

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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/128501 OR https://cpl.iphy.ac.cn/Y2012/V29/I12/128501

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	YANG Yi
	ZHOU Chang-Jian
	PENG Ping-Gang
	XIE Dan
	REN Tian-Ling
	PAN Xiao
	LIU Jing-Song

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