| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method |
| HE Su-Ming1,2, LUO Xiang-Dong2, ZHANG Bo2**, FU Lei2, CHENG Li-Wen2, WANG Jin-Bin1**, LU Wei2** |
1Key Laboratory of Low-Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105
2National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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HE Su-Ming, LUO Xiang-Dong, ZHANG Bo et al 2012 Chin. Phys. Lett. 29 127802 |
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Abstract The junction temperature of red, green and blue high power light emitting diodes (LEDs) is measured by using the emission peak shift method and the forward voltage method. Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature. The linear coefficients of the red, green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/ °C and from 1.33 to 3.59 mV/ °C, respectively. Compared with the forward voltage method, the peak shift method is almost independent of bias current and sample difference. The variation of the slopes is less than 2% for the peak shift method and larger than 30% for the forward voltage method, when the LEDs are driven by different bias currents. It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions.
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Received: 17 April 2012
Published: 04 March 2013
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