Chin. Phys. Lett.  2012, Vol. 29 Issue (12): 127102    DOI: 10.1088/0256-307X/29/12/127102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Influence of Oxygen Partial Pressure on the Fermi Level of ZnO Films Investigated by Kelvin Probe Force Microscopy
SU Ting1**, ZHANG Hai-Feng2
1Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576
2Department of Physics, Jiamusi University, Jiamusi 154007
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SU Ting, ZHANG Hai-Feng 2012 Chin. Phys. Lett. 29 127102
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Abstract The influence of oxygen partial pressure on the Fermi level of ZnO films prepared by pulsed laser deposition is investigated. The contact potential difference of the ZnO films fabricated under various oxygen partial pressures is studied systematically using Kelvin probe force microscopy. The Fermi level shifted by 0.35 eV as oxygen partial pressure increased. This indicates a significant change in the electronic structure and energy balance in ZnO films. This fact provides a consistent explanation that the changes in carrier concentration, resistivity and mobility of ZnO films are attributed to oxygen vacancy induced shift of the Fermi level.
Received: 13 August 2012      Published: 04 March 2013
PACS:  71.20.Nr (Semiconductor compounds)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127102       OR      https://cpl.iphy.ac.cn/Y2012/V29/I12/127102
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SU Ting
ZHANG Hai-Feng
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