Chin. Phys. Lett.  2012, Vol. 29 Issue (11): 118503    DOI: 10.1088/0256-307X/29/11/118503
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes
LI Bin, YANG Huai-Wei, GUI Qiang, YANG Xiao-Hong, WANG Jie, WANG Xiu-Ping, LIU Shao-Qing, HAN Qin**
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
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LI Bin, YANG Huai-Wei, GUI Qiang et al  2012 Chin. Phys. Lett. 29 118503
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Abstract A separate absorption, grading, charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated. It has a thin multiplication layer and a planar structure. Through the use of a well and a single floating guard ring to suppress edge breakdown, the device can easily be fabricated by one step epitaxial growth and one step diffusion. The dark current of a 30 μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90% of the breakdown voltage. The responsivity at 1.55 μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.
Received: 28 June 2012      Published: 28 November 2012
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/11/118503       OR      https://cpl.iphy.ac.cn/Y2012/V29/I11/118503
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LI Bin
YANG Huai-Wei
GUI Qiang
YANG Xiao-Hong
WANG Jie
WANG Xiu-Ping
LIU Shao-Qing
HAN Qin
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[4] Wei J, Dries C, Wang H, Lange M L, Olsen G H and Forrest S R 2002 IEEE Photon. Technol. Lett. 14 977
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[6] Tarof L E, Bruce R, Knight D G, Yu J, Kim H B and Baird T 1995 IEEE Photon. Technol. Lett. 7 1330
[7] Cho S R, Yang S K, Ma J S, Lee S D, Yu J S, Choo A G, Kim T I and Brum J 2000 IEEE Photon. Technol. Lett. 12 534
[8] Zhou P, Li C F, Liao C J, Wei Z J and Yuan S Q 2011 Chin. Phys. B 20 028502
[9] Tan L J J, Ng J S, Tan C H and David J P R 2008 IEEE J. Quantum Electron. 44 378
[10] Lahrichi M, Glastre G, Carpentier D, Lagay N, Decobert J and Achouche M 2010 IEEE Photon. Technol. Lett. 22 1373
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