| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High Sensitivity Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors |
| ZHAO Xiao-Feng, WEN Dian-Zhong**, ZHUANG Cui-Cui, LIU Gang, WANG Zhi-Qiang |
Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080
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| Cite this article: |
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ZHAO Xiao-Feng, WEN Dian-Zhong, ZHUANG Cui-Cui et al 2012 Chin. Phys. Lett. 29 118501 |
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Abstract A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as the sensing layers. By using CMOS technology, the fabrication of the nano-polysilicon thin film transistors with Hall probes can be achieved on the ?100? high resistivity single silicon substrates, in which the thicknesses of the nano-polysilicon thin films are 120 nm and the length width ratio of the channel is 320 μm /80 μm . When VDS=5.0 V, the magnetic sensitivity and linearity is 264 mV/T and 0.23%f.s. (full scale), respectively. The experimental results show that the magnetic sensors based on nano-polysilicon thin film transistors with Hall probes exhibit high sensitivity.
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Received: 08 August 2012
Published: 28 November 2012
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| PACS: |
85.75.Nn
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(Hybrid Hall devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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