| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure |
| A. John Peter**, Chang Woo Lee |
Department of Chemical Engineering and Green Energy Center, College of Engineering, Kyung Hee University, 1 Seochun, Gihung, Yongin, Gyeonggi 446-701, S. Korea
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| Cite this article: |
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A. John Peter, Chang Woo Lee 2012 Chin. Phys. Lett. 29 117201 |
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Abstract Photo-induced spin dependent electron transmission through a narrow gap InSb/InGaxSb1?x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.
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Received: 19 April 2012
Published: 28 November 2012
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| PACS: |
72.25.-b
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(Spin polarized transport)
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72.25.Dc
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(Spin polarized transport in semiconductors)
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71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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