| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Growth and Characterization of an a-Plane InxGa1?xN on a r-Plane Sapphire |
| ZHAO Gui-Juan**, LI Zhi-Wei, WEI Hong-Yuan, LIU Gui-Peng, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
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| Cite this article: |
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ZHAO Gui-Juan, LI Zhi-Wei, WEI Hong-Yuan et al 2012 Chin. Phys. Lett. 29 117103 |
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Abstract The non-polar a-plane (1120) InxGa1?xN alloys with different indium compositions (0.074≤x≤0.555) were grown on r-plane (1012) sapphire substrates by metalorganic chemical vapor deposition, and the indium compositions x are estimated from x-ray diffraction measurements. The in-plane orientation of the InxGa1?xN with respect to the r-plane substrate is confirmed to be [1100]sapphire|| [1120]InxGa1?xN and [1101]sapphire|| [0001]InxGa1?xN. The effects of substrate temperature, reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated. The morphology of the a-plane InxGa1?xN is found to be significantly improved with the decreasing indium composition x and growth rate. Moreover, the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence, and the degree of anisotropy decreases with the increase of indium composition.
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Received: 16 August 2012
Published: 28 November 2012
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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