| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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GISAXS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H2 Plasma Exposure |
| ZUO Ze-Wen1, CUI Guang-Lei1, WANG Yu2, WANG Jun-Zhuan2, PU Lin2, SHI Yi2,** |
1College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000
2School of Electronic Science and Engineering, and Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093
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| Cite this article: |
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ZUO Ze-Wen, CUI Guang-Lei, WANG Yu et al 2012 Chin. Phys. Lett. 29 106801 |
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Abstract Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction. High-pressure H2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film, which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si–Si bonds.
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Received: 11 June 2012
Published: 01 October 2012
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| PACS: |
68.55.ag
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(Semiconductors)
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61.05.cf
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(X-ray scattering (including small-angle scattering))
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81.05.Gc
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(Amorphous semiconductors)
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