Chin. Phys. Lett.  2012, Vol. 29 Issue (1): 017803    DOI: 10.1088/0256-307X/29/1/017803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (11
XU Sheng-Rui**, LIN Zhi-Yu, XUE Xiao-Yong, LIU Zi-Yang, MA Jun-Cai, JIANG Teng, MAO Wei, WANG Dang-Hui, ZHANG Jin-Cheng, HAO Yue
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
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XU Sheng-Rui, LIN Zhi-Yu, XUE Xiao-Yong et al  2012 Chin. Phys. Lett. 29 017803
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Abstract Nonpolar (1120) and semipolar (1122) GaN are grown on r−plane and m−plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (1122) and nonpolar a−plane GaN template is 3×105 cm−1 and 8×105 cm−1, respectively. The semipolar (1122) GaN shows an arrowhead−like structure, and the nonpolar a−plane GaN has a much smoother morphology with a streak along the c−axis. Both nonpolar (1120) and semipolar (1122) GaN have very strong BSF luminescence due to the optically active character of the BSFs.
Keywords: 78.55.Cr      81.15.Kk     
Received: 13 September 2011      Published: 07 February 2012
PACS:  78.55.Cr (III-V semiconductors)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/1/017803       OR      https://cpl.iphy.ac.cn/Y2012/V29/I1/017803
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XU Sheng-Rui
LIN Zhi-Yu
XUE Xiao-Yong
LIU Zi-Yang
MA Jun-Cai
JIANG Teng
MAO Wei
WANG Dang-Hui
ZHANG Jin-Cheng
HAO Yue
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