| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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THz-Wave Difference Frequency Generation by Phase-Matching in GaAs/AlxGa1−xAs Asymmetric Quantum Well |
| CAO Xiao-Long1,2, WANG Yu-Ye1,2, XU De-Gang1,2**, ZHONG Kai1,2, LI Jing-Hui3, LI Zhong-Yang1,2, ZHU Neng-Nian1,2, YAO Jian-Quan1,2 |
1College of Precision Instrument and Opto-electronics Engineering, Institute of Laser and Opto-electronics, Tianjin University, Tianjin 300072
2Key Laboratory of Opto-electronics Information Technology (Ministry of Education), Tianjin University, Tianjin 300072
3Department of Computer Science and Technology, Renai College, Tianjin University, Tianjin 301636
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| Cite this article: |
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CAO Xiao-Long, WANG Yu-Ye, XU De-Gang et al 2012 Chin. Phys. Lett. 29 014207 |
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Abstract An asymmetric quantum well (AQW) is designed to emit a terahertz (THz) wave by using difference frequency generation (DFG) with the structure of GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As under a doubly resonant condition. It is found that the second−order nonlinear susceptibility χ(2) varies with the two pump wavelengths, and it can reach the peak value of 1.61 µm/V when the wavelengths are given as λp1=9.756 µm and λp2=10.96 µm, respectively. The numerical results show that the refractive index of one pump wave in the AQW is concerned with not only its own wavelength but also the other wavelength. Phase-matching inside the AQW can be obtained through the tuning of the two pump wavelengths.
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| Keywords:
42.70.Nq
72.80.Ey
78.67.De
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Received: 01 January 1900
Published: 07 February 2012
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| PACS: |
42.70.Nq
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(Other nonlinear optical materials; photorefractive and semiconductor materials)
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72.80.Ey
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(III-V and II-VI semiconductors)
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78.67.De
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(Quantum wells)
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