| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices |
| LI Zhe-Yang1,2**, HAN Ping1, LI Yun2, NI Wei-Jiang2, BAO Hui-Qiang3, LI Yu-Zhu2
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1Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
2National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016
3TanKeBlue Semiconductor CO., Ltd., Beijing 100190
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| Cite this article: |
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LI Zhe-Yang, HAN Ping, LI Yun et al 2011 Chin. Phys. Lett. 28 098101 |
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Abstract Homo-epitaxial layers are successfully grown on Si-face 4° off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I–V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.
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| Keywords:
81.10.Aj 81.15.Gh 81.15.-z
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Received: 24 March 2011
Published: 30 August 2011
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