| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer |
| GUO Yu-Bing1, CHEN Yong-Hai1**, XIANG Ying2, QU Sheng-Chun1, WANG Zhan-Guo1
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2School of Information Engineering, Guangdong University of Technology, Guangzhou 510006
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| Cite this article: |
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GUO Yu-Bing, CHEN Yong-Hai, XIANG Ying et al 2011 Chin. Phys. Lett. 28 096101 |
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Abstract We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering (FLS) experiment for a cell with ZnO nanorod doped in only one poly (vinyl alcohol) (PVA) layer. When a dc voltage with a positive pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the transverse direction, which results in a higher diffraction efficiency. Conversely, when the dc voltage with a negative pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the longitudinal direction, which leads to a lower diffraction efficiency. A largest diffraction efficiency of about 9% is achieved in the ZnO nanorod doped liquid crystal cell.
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| Keywords:
61.30.Hn
42.25.Fx
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Received: 18 March 2011
Published: 30 August 2011
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| PACS: |
61.30.Hn
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(Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions)
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42.25.Fx
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(Diffraction and scattering)
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[1] Khoo I C 1995 Liquid Crystals (New York: Wiley interscience) p 45
[2] Khoo I C, Li H and Liang Y 1994 Opt. Lett. 19 1723
[3] Khoo I C 1996 IEEE J. Quantum Electron. 32 525
[4] Khoo I C 1995 Opt. Lett. 20 2137
[5] Xiang Y, Liu Y K, Li T, Yang S L and Jiang Z J 2008 J. Appl. Phys. 104 063107
[6] Li T, Xiang Y, Liu Y K, Wang J and Yang S L 2009 Chin. Phys. Lett. 26 086108
[7] Wu X L, Siu G G, Fu C L and Ong H C 2001 Appl. Phys. Lett. 78 2285
[8] Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E and Cantwell G 2002 Appl. Phys. Lett. 81 622
[9] Abdullah M, Morimoto T and Okuyama K 2003 Adv. Func. Mater. 13 800
[10] Shan F K, Liu G X, Lee W J, Lee G H, Kim I S and Shin B C 2005 Appl. Phys. Lett. 86 221910
[11] Zhang J, Ostroverkhov V, Singer K D, Reshetnyak V and Reznikov Y 2000 Opt. Lett. 25 414
[12] Sun X D, Yao F G, Pei Y B and Zhang J L 2007 J. Appl. Phys. 102 013104
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