Chin. Phys. Lett.  2011, Vol. 28 Issue (8): 087305    DOI: 10.1088/0256-307X/28/8/087305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment
ZHAO Xiang-Fu**, HAN Ping, ZHANG Rong, ZHENG You-Dou
School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
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ZHAO Xiang-Fu, HAN Ping, ZHANG Rong et al  2011 Chin. Phys. Lett. 28 087305
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Abstract After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.
Keywords: 73.25.+i      73.40.Ty      73.61.Cw     
Received: 16 April 2011      Published: 28 July 2011
PACS:  73.25.+i (Surface conductivity and carrier phenomena)  
  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
  73.61.Cw (Elemental semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/8/087305       OR      https://cpl.iphy.ac.cn/Y2011/V28/I8/087305
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ZHAO Xiang-Fu
HAN Ping
ZHANG Rong
ZHENG You-Dou
[1] Marinkovic M, Hashem E, Chan K Y, Gordijn A, Stiebig H and Knipp D 2010 Appl. Phys. Lett. 97 073502
[2] Saha T K and Zhou WD 2009 J. Phys. D: Appl. Phys. 42 085115
[3] Menard E, Nuzzo RG and Rogers J A 2005 Appl. Phys. Lett. 86 093507
[4] Yuan H C, Ma Z Q, Robert M M, Savage D E and Lagally MG 2006 J. Appl. Phys. 100 013708
[5] Scott S, Peng W, Kiefer A, Jiang H, knezevic I, Savage D, Eriksson M and Lagally M 2009 ACS NANO 3 1683
[6] Cui Y , Wei Q , Park H and Lieber C 2001 Science 293 1289
[7] Yuan H C, Shin G, Sun L, Bhattacharya P, Lagally M G, Celler G K and Ma Z 2009 Appl. Phys. Lett. 94 013102
[8] Yablonovitch E, Allara D L, Chang C C, Gmitter T and Bright T T 1986 Phys. Rev. Lett. 57 249
[9] Thornton J M C and Williams R H 1989 Semicond. Sci. Technol. 4 847
[10] Watanabe D, En A, Nakamura S, Suhara M and Okumura T 2003 Appl. Surf. Sci. 216 24
[11] Schlaf R, Hinogami R, Fujitani M, Yae S and Nakato Y 1999 J. Vac. Sci. Technol. A 17 164
[12] Angermann H 2005 Solid State Phenom. 103-104 23
[13] Huang L J and Lau W M 1992 Appl. Phys. Lett. 60 1108
[14] Ling L, Kuwabara S, Abe T and Shimura F 1993 J. Appl. Phys. 73 3018
[15] Kato Y, Ito T and Hiraki A 1988 Jpn. J. Appl. Phys. 27 L1406
[16] Gräf D, Grundner M and Schulz R 1989 J. Vac. Sci. Technol. A 7 808
[17] Pauw L 1958 Philips Res. Repts. 13 1
[18] Takahagi T, Lshitani A, Kuroda H and Nagasawa Y 1991 J. Appl. Phys. 69 803
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