Chin. Phys. Lett.  2011, Vol. 28 Issue (8): 086201    DOI: 10.1088/0256-307X/28/8/086201
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field
PAN Jiang-Hong, LIU Li-Zhe, LIU Min**
College of Physical and Technology, Guangxi Normal University, Guilin 541004
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PAN Jiang-Hong, LIU Li-Zhe, LIU Min 2011 Chin. Phys. Lett. 28 086201
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Abstract We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials, in the presence of a uniform electric field applied parallel to the dot axis. The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii, then begins to drop quickly. Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position, dot thickness and applied electric field are also presented.
Keywords: 62.23.Eg      67.80.Dm      68.55.-a     
Received: 14 April 2011      Published: 28 July 2011
PACS:  62.23.Eg (Nanodots)  
  67.80.dm (Films)  
  68.55.-a (Thin film structure and morphology)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/8/086201       OR      https://cpl.iphy.ac.cn/Y2011/V28/I8/086201
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PAN Jiang-Hong
LIU Li-Zhe
LIU Min
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