| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors |
| XU Xiao-Bo**, ZHANG He-Ming
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Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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XU Xiao-Bo, ZHANG He-Ming 2011 Chin. Phys. Lett. 28 078505 |
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Abstract An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained, considering vertical and horizontal impact ionization effects. The avalanche multiplication is found to be dependent on the collector width and doping concentration, and shows kinks with the increase of reverse base-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13 µm millimeter wave SiGe SOI BiCMOS technology.
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| Keywords:
85.30.Pq
85.30.De
85.30.-z
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Received: 08 September 2010
Published: 29 June 2011
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| PACS: |
85.30.Pq
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(Bipolar transistors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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