| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers |
| Seoung-Hwan Park1**, Yong-Tae Moon2, Jeong Sik Lee2, Ho Ki Kwon2, Joong Seo Park2, Doyeol Ahn3
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1 Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Republic of Korea
2 SLED R&D Center, LG Innotek, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Republic of Korea
3 Department of Electrical and Computer Engineering, University of Seoul, Seoul 130-743, Republic of Korea
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| Cite this article: |
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Seoung-Hwan Park, Yong-Tae Moon, Jeong Sik Lee et al 2011 Chin. Phys. Lett. 28 078503 |
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Abstract Optical properties of graded InGaN/GaN quantum well (QW) lasers are analyzed as improved gain media for laser diodes emitting near 500 nm. These results are compared with those of conventional InGaN/GaN QW structures. The heavy-hole effective mass around the topmost valence band is found to nearly not be affected by the inclusion of the graded layer. The graded InGaN/GaN QW structure shows a much larger matrix element than the conventional InGaN/GaN QW structure. The radiative current density dependences of the optical gain are similar to each other. However, the graded QW structure is expected to have lower threshold current density than the conventional QW structure because the former has a lower threshold carrier density than the latter.
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| Keywords:
85.30.De
85.30.Tv
77.65.Ly
85.35.Be
02.60.Cb
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Received: 17 September 2010
Published: 29 June 2011
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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77.65.Ly
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(Strain-induced piezoelectric fields)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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02.60.Cb
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(Numerical simulation; solution of equations)
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