| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Restabilizing Mechanisms after the Onset of Thermal Instability in Bipolar Transistors |
| CHEN Liang**, ZHANG Wan-Rong, XIE Hong-Yun, JIN Dong-Yue, DING Chun-Bao, FU Qiang, WANG Ren-Qing, XIAO Ying, ZHAO Xin
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| College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 |
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| Cite this article: |
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CHEN Liang, ZHANG Wan-Rong, XIE Hong-Yun et al 2011 Chin. Phys. Lett. 28 078501 |
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Abstract The restabilizing mechanisms after the onset of thermal instability in bipolar transistors are studied by theoretical analyses, computer simulations and experimental measurements. Restability conditions are described by novel analytical formulae. Furthermore, the expression of collect current in the second fly-back point is given for the first time. The effects of emitter ballast resistance, collector-emitter voltage and thermal resistance on restabilization mechanisms are expressed and investigated.
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| Keywords:
85.30.De
72.15.Jf
44.10.+i
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Received: 24 November 2010
Published: 29 June 2011
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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44.10.+i
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(Heat conduction)
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