Chin. Phys. Lett.  2011, Vol. 28 Issue (7): 078401    DOI: 10.1088/0256-307X/28/7/078401
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery
CHENG Zai-Jun1, SAN Hai-Sheng1**, CHEN Xu-Yuan1,2**, LIU Bo3, FENG Zhi-Hong3
1 Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005
2 Faculty of Science and Engineering, Vestfold University College, P.O. Box 2243, N-3103, Tønsberg, Norway
3 Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan et al  2011 Chin. Phys. Lett. 28 078401
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Abstract A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open−circuit voltage Voc of the fabricated single 2×2 mm2 cell reaches as high as 1.62 V, the short−circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
Keywords: 84.90.+a      81.15.Gh      73.40.Kp     
Received: 07 May 2011      Published: 29 June 2011
PACS:  84.90.+a (Other topics in electronics, radiowave and microwave technology, and direct energy conversion and storage)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/7/078401       OR      https://cpl.iphy.ac.cn/Y2011/V28/I7/078401
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CHENG Zai-Jun
SAN Hai-Sheng
CHEN Xu-Yuan
LIU Bo
FENG Zhi-Hong
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