| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures |
| YIN Yang1, RAN Guang-Zhao1**, ZHANG Bin2, QIN Guo-Gang1**
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1School of Physics and the State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871
2Institute of Modern Physics, Fudan University, Shanghai 200433
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YIN Yang, RAN Guang-Zhao, ZHANG Bin et al 2011 Chin. Phys. Lett. 28 077801 |
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Abstract SiC:Er2O3 films with different ratios of SiC to SiC:Er2O3 are deposited on p−type Si substrates by the magnetron co-sputtering technique, which was fully compatible with current Si processing technologies. Intense room temperature 1.54 µm photoluminescence (PL) from Er3+ ions in the SiC:Er2O3 films is observed and the PL intensity at 1.54 µm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.% under both direct and indirect excitations. The 1.54 µm electroluminescence from the structure of indium tin oxide (ITO)/n+ −Si/SiC:Er2O3/p−Si with suitable ratios of SiC to SiC:Er2O3 is measured under forward biases.
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| Keywords:
78.55.-m
78.60.Fi
42.70.Km
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Received: 12 April 2011
Published: 29 June 2011
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.60.Fi
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(Electroluminescence)
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42.70.Km
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(Infrared transmitting materials)
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