| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD |
| WANG Jin1, WANG Hui1, ZHAO Wang1, MA Yan1, LI Wan-Cheng1, XIA Xiao-Chuan2, SHI Zhi-Feng1, ZHAO Long1, ZHANG Bao-Lin1, DONG Xin1**, DU Guo-Tong1
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1 State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering, Jilin University, Changchun 130012
2 School of Physics and Optoelectronics Technology, Dalian University of Technology, Dalian 116023
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| Cite this article: |
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WANG Jin, WANG Hui, ZHAO Wang et al 2011 Chin. Phys. Lett. 28 077301 |
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Abstract NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films.
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| Keywords:
73.20.At
73.20.Hb
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Received: 20 December 2010
Published: 29 June 2011
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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