| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of an Intense Laser Field and Hydrostatic Pressure on the Intersubband Transitions and Binding Energy of Shallow Donor Impurities in a Quantum Well |
| U. Yesilgul1**, F. Ungan1, E. Kasapoglu1, H. Sari1, I. Sökmen2
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1 Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey
2 Department of Physics, Dokuz Eylül University, 35160 Izmir, Turkey
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| Cite this article: |
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U. Yesilgul, F. Ungan, E. Kasapoglu et al 2011 Chin. Phys. Lett. 28 077102 |
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Abstract We have calculated the intersubband transitions and the ground-state binding energies of a hydrogenic donor impurity in a quantum well in the presence of a high-frequency laser field and hydrostatic pressure. The calculations are performed within the effective mass approximation, using a variational method. We conclude that the laser field amplitude and the hydrostatic pressure provide an important effect on the electronic and optical properties of the quantum wells. According to the results obtained from the present work, it is deduced that (i) the binding energies of donor impurity decrease as the laser field increase, (ii) the binding energies of donor impurity increase as the hydrostatic pressure increase, (iii) the intersubband absorption coefficients shift toward lower energies as the hydrostatic pressure increases, (iv) the magnitude of absorption coefficients decrease and also shift toward higher energies as the laser field increase. It is hopeful that the obtained results will provide important improvements in device applications.
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| Keywords:
71.55.Eq
73.20.Hb
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Received: 23 December 2010
Published: 29 June 2011
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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