| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Photocurrent Effect in Reverse-Biased p-n Silicon Waveguides in Communication Bands |
| ZHAO Yong, XU Chao, WANG Wan-Jun, ZHOU Qiang, HAO Yin-Lei, YANG Jian-Yi, WANG Ming-Hua, JIANG Xiao-Qing**
|
Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027
|
|
| Cite this article: |
|
ZHAO Yong, XU Chao, WANG Wan-Jun et al 2011 Chin. Phys. Lett. 28 074216 |
|
|
|
|
Abstract The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated. The photocurrent, which is mainly related to surface-state absorption, defect-state absorption and/or two-photon absorption, is more than 0.08 µA/mm under 8 V reverse biasing and 0.75 mW irradiation. The responsivity of a silicon waveguide with length of 4500 µm achieves 0.5 mA/W. Moreover, the enhancement of the photocurrent effect under the electric field is discussed.
|
| Keywords:
42.82.-m
42.82.Et
85.60.Gz
|
|
|
Received: 24 March 2011
Published: 29 June 2011
|
|
| PACS: |
42.82.-m
|
(Integrated optics)
|
| |
42.82.Et
|
(Waveguides, couplers, and arrays)
|
| |
85.60.Gz
|
(Photodetectors (including infrared and CCD detectors))
|
|
|
|
|
|
[1] Casalino M, Coppola G, Iodice M, Rendina I and Sirleto L 2010 Sensors 10 10571
[2] Baehr-Jones T, Hochberg M and Scherer A 2008 Opt. Express 16 1659
[3] Chen H, Luo X and Poon A W 2009 Appl. Phys. Lett. 95 171111
[4] Geis M W, Spector S J, Grein M E, Schulein R T, Yoon J U, Lennon D M, Deneault S, Gan F, Kaertner F X and Lyszczarz T M 2007 IEEE Photon. Technol. Lett. 19 152
[5] Geis M W, Spector S J, Grein M E, Yoon J U, Lennon D M and Lyszczarz T M 2009 Opt. Express 17 5193
[6] Preston K, Lee Y H D, Zhang M and Lipson M 2011 Opt. Lett. 36 52
[7] Fathpour S, Tsia K K and Jalali B 2007 IEEE J. Quantum Electron. 43 1211
[8] Bravo-Abad J, Ippen E P and Soljacic M 2009 Appl. Phys. Lett. 94 241103
[9] Yamashita Y, Namba K, Nakato Y, Nishioka Y and Kobayashi H 1996 J. Appl. Phys. 79 7051
[10] Fan H Y and Ramdas A K 1959 J. Appl. Phys. 30 1127
[11] Cheng L J, Corelli J C, Corbett J W and Watkins G D 1966 Phys. Rev. 152 761
[12] Logan D F, Jessop P E, Knights A P, Wojcik G and Goebel A 2009 Opt. Express 17 18571
[13] Liang T K, Tsang H K, Day I E, Drake J, Knights A P and Asghari M 2002 Appl. Phys. Lett. 81 1323
[14] Xiao X, Zhu Y, Xu H, Zhou L, Hu Y, Li Z, Li Y, Yu Y and Yu J 2010 Chin. Phys. Lett. 27 094207
[15] Chuang S L1995 Physics of Optoelectronics Devices (New York: John Wiley)
[16] Wendland P H and Chester M 1965 Phys. Rev. 140 A1384
[17] Fowler R H and Nordheim L 1928 Proc. R. Soc. London A 119 173
[18] Sze S M and Ng K K 2008 Physics of Semiconductor Devices (Xi'an: Xi'an Jiaotong University Press) (in Chinese)
[19] Chen H and Poon A W 2010 Appl. Phys. Lett. 96 191106
[20] Bravo-Abad J, Ippen E P and Soljacic M 2009 Appl. Phys. Lett. 94 241103
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
