Chin. Phys. Lett.  2011, Vol. 28 Issue (5): 057201    DOI: 10.1088/0256-307X/28/5/057201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Frequency-Dependent Electrical Transport Properties of 4,4',4
LI Bi-Xin1,2, CHEN Jiang-Shan1, ZHAO Yong-Biao1, MA Dong-Ge1**
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
2Graduate University of Chinese Academy of Sciences, Beijing 100049
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LI Bi-Xin, CHEN Jiang-Shan, ZHAO Yong-Biao et al  2011 Chin. Phys. Lett. 28 057201
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Abstract Frequency-dependent electrical transport properties of 4,4',4"−tri(N−carbazolyl)-triphenylamine (TCTA) are analyzed by impedance spectroscopy (IS) as functions of bias and temperature. The Cole-Cole plot shows a single semicircle which indicates that the equivalent circuit can be designed as a single parallel resistor Rp and capacitor Cp network with a series resistance Rs. The bulk capacitance Cp remains unchanged while the resistance Rp decreases along with bias voltage. Conduction mechanism matches well with the space-charge-limited current (SCLC) model with exponential trap charge distributions. The temperature-dependent impedance studies reveal the activation energy of 0.246 eV with no phase change in the temperature range 220–320 K. These results indicate that the IS method is applicable for organic semiconductors having a wide band gap.
Keywords: 72.20.Jv      72.80.Le      84.37.+q      85.30.De      85.30.Fg     
Received: 24 February 2011      Published: 26 April 2011
PACS:  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  72.80.Le (Polymers; organic compounds (including organic semiconductors))  
  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/5/057201       OR      https://cpl.iphy.ac.cn/Y2011/V28/I5/057201
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LI Bi-Xin
CHEN Jiang-Shan
ZHAO Yong-Biao
MA Dong-Ge
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