Chin. Phys. Lett.  2011, Vol. 28 Issue (4): 048401    DOI: 10.1088/0256-307X/28/4/048401
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT
REN Guo-Zhong1, LIU Yang1, MA Hong-An2, SU Tai-Chao2, LIN Le-Jing1, DENG Le2, JIANG Yi-Ping2, ZHENG Shi-Zhao2, JIA Xiao-Peng2**
1Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105
2National Lab of Superhard Materials, Jinlin University, Changchun 130012
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REN Guo-Zhong, LIU Yang, MA Hong-An et al  2011 Chin. Phys. Lett. 28 048401
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Abstract Polycrystalline skutterudites Ba0.32Co4Sb12−xTex (nominally x=0.1–0.7) are synthesized by the high pressure and high temperature (HPHT) method. The influence of Te substitution on electrical transport properties are investigated in the temperature range of 300–710 K. All the samples show n−type conduction. It is found that the presence of Te substantially decreases electrical resistivity without any detrimental effect on the Seebeck coefficients, which improves the power factor. Among all the samples, Ba0.32Co4Sb11.5Te0.5 shows the highest thermoelectric figure of merit of 0.76 at 710 K.
Keywords: 84.60.Rs      72.15.Jf      81.05.Cy      81.05.Dz      81.05.Ea     
Received: 23 April 2010      Published: 29 March 2011
PACS:  84.60.Rs  
  72.15.Jf (Thermoelectric and thermomagnetic effects)  
  81.05.Cy (Elemental semiconductors)  
  81.05.Dz (II-VI semiconductors)  
  81.05.Ea (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/4/048401       OR      https://cpl.iphy.ac.cn/Y2011/V28/I4/048401
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REN Guo-Zhong
LIU Yang
MA Hong-An
SU Tai-Chao
LIN Le-Jing
DENG Le
JIANG Yi-Ping
ZHENG Shi-Zhao
JIA Xiao-Peng
[1] DiSalvo F J 1999 Science 285 703
[2] Mi J L, Zhao X B, Zhu T J et al 2008 J. Alloys Compd. 452 225
[3] Liu K G, Zhang J X and Xiang D 2007 J. Mater. Proc. Technol. 184 257
[4] Wu H Q, Xu D M, Wang Q, Wang Q Y et al 2008 J. Alloys Compd. 463 78
[5] Stoch A, Guzdek P, Stoch P, Pszczola et al 2009 J. Alloys Compd. 467 83
[6] Nordstrom L and Singh D J 1996 Phys. Rev . B 53 1103
[7] Caillat T, Borshchevsky A and Fleurial J P 1996 J. Appl. Phys. 80 4442
[8] Zhou Z, Uher C, Jewell A and Caillat T 2005 Phys. Rev. B 71 235209
[9] Morelli D T and Meisner G P 1995 J. Appl. Phys. 77 3777
[10] Pei Y Z, Chen L D, Zhang W, Shi X et al 2006 Appl. Phys. Lett. 89 221107
[11] Tang X, Zhang Q, Chen L and Goto T 2005 J. Appl. Phys. 97 093712
[12] Stiewe C, Bertini L, Toprak M and Christensen M 2005 J. Appl. Phys. 97 044317
[13] Chen L D, Kawahara T, Tang X F and Goto T 2001 J. Appl. Phys. 90 1864
[14] Qin B K, Li X L, Li S S et al 2010 J. Inorg. Mater. 25 23
[15] Deng L, Ma H A, Su T C, Yu F R and Tian Y J 2009 Mater. Lett. 63 2139
[16] Peng J Y, Yang J, Zhang T J, Song X L and Chen Y H 2004 J. Alloys Compd. 381 313
[17] Zhang X, Lu Q M, Zhang J X, Wei Q et al 2007 J. Alloys Compd. 457 368
[18] Yang L, Hng H, Cheng H, Sun T, Ma J et al 2008 Mater. Lett. 62 2483
[19] Su T C, Jia X P, Ma H A, Zang C Y et al 2008 Mater. Lett. 62 3269
[20] Su T C, Jia X P, Ma H A, Jiang Y P et al 2009 J. Alloys Compd. 468 410
[21] Ma H A, Su T C, Zhu P W, Guo J G et al 2008 J. Alloys Compd. 454 415
[22] He Q Y, Hu S J, Tang X G, Lan Y C et al 2008 Appl. Phys. Lett. 93 042108
[23] Wojciechowski K T, Tobola J and Leszczyfiski 2003 J. Alloys Compd. 361 19
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