FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3µm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design |
XU Peng-Fei1, YANG Tao1**, JI Hai-Ming1, CAO Yu-Lian2, GU Yong-Xian1, WANG Zhan-Guo1
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Cite this article: |
XU Peng-Fei, YANG Tao, JI Hai-Ming et al 2011 Chin. Phys. Lett. 28 044201 |
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Abstract We demonstrate a technique of temperature compensation for 1.3 µm InAs/GaAs quantum-dot (QD) lasers by facet coating design. The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises. To realize this, we design a type of facet coating by shifting the central wavelength of the facet coating from 1310 nm to 1480 nm, whose reflectivity increases as the emission wavelength of the lasers red-shifts. Consequently, the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10°C to 70°C, compared with the traditional one with a temperature-independent mirror loss.
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Keywords:
42.70.Hj
42.72.-g
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Received: 23 December 2010
Published: 29 March 2011
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[1] Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40 939
[2] Asada M, Miyamoto Y and Suematsu Y 1986 IEEE J. Quantum Electron. 22 1915
[3] Arakawa Y and Yariv A 1986 IEEE J. Quantum Electron. 22 1887
[4] Le H Q, Lin C H and Pei S S 1998 Appl. Phys. Lett. 72 3434
[5] Shchekin O B, Ahn J and Deppe D G 2002 Electron. Lett. 38 712
[6] Fathpour S, Mi Z, Bhattacharya P, Kovsh A R, Mikhrin S S, Krestnikov I L, Kohukhov A V and Ledentsov N N 2004 Appl. Phys. Lett. 85 5164
[7] Otsubo K, Hatori N, Ishida M, Okumura S, Akiyama T, Nakata Y, Ebe H, Sugawara M and Arakawa Y 2004 Jpn. J. Appl. Phys. 43 L1124
[8] Cao Y L, Yang T, Ji H M, Ma W Q, Cao Q and Chen L H 2008 IEEE Photon. Technol. Lett. 20 1860
[9] Lin C C, Wu M C and Wang W H 1999 IEE Proc. Optoelectron. 146 268
[10] Ozgur G, Demir A and Deppe D G 2009 IEEE J. Quantum Electron. 45 1265
[11] Ji H M, Yang T, Cao Y L, Ma W Q, Cao Q and Chen L H 2009 Phys. Status Solidi C 64 948
[12] Chuang S L 1995 Physics of Optoelectronic Devices (New York: John Wiley & Sons, Inc.)
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