| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon |
| LIN Li-Xia1, CHEN Jia-He1,2, WU Peng1, ZENG Yu-Heng1, MA Xiang-Yang1, YANG De-Ren1**
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1State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
2Institut für Angewandte Physik, Technische Universität Dresden, D-01062 Dresden, Germany
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| Cite this article: |
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LIN Li-Xia, CHEN Jia-He, WU Peng et al 2011 Chin. Phys. Lett. 28 036104 |
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Abstract The formation of a denuded zone (DZ) by conventional furnace annealing (CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper (Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski (GHPCZ) silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect (BMD) region could be formed in heavily phosphorus-doped Czochralski (HPCZ) silicon and GHPCZ silicon wafers. This is ascribed to the formation of phosphorus-vacancy (P-V) related complexes and germanium-vacancy (Ge-V) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.
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| Keywords:
61.72.Yx
61.72.Cc
71.55.Cn
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Received: 26 May 2010
Published: 28 February 2011
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| PACS: |
61.72.Yx
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(Interaction between different crystal defects; gettering effect)
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61.72.Cc
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(Kinetics of defect formation and annealing)
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71.55.Cn
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(Elemental semiconductors)
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