Chin. Phys. Lett.  2011, Vol. 28 Issue (2): 028801    DOI: 10.1088/0256-307X/28/2/028801
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
A New Method to Measure Trap Characteristics of Silicon Solar Cells
MA Xun1,2, LIU Zu-Ming2, QU Sheng3, WANG Shu-Rong2, HAO Rui-Ting2, LIAO Hua2
1College of Water Conservancy and Civil Engineering, China Agricultural University, Beijing 100083
2Solar Energy Research Institute, Yunnan Normal University, Kunming 650092
3Eoplly New Energy Technology Co. Ltd, Beijing 100016
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MA Xun, LIU Zu-Ming, QU Sheng et al  2011 Chin. Phys. Lett. 28 028801
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Abstract A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley–Read–Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500–1050 nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.
Keywords: 88.40.Jj      81.70.Fy     
Received: 20 July 2010      Published: 30 January 2011
PACS:  88.40.jj (Silicon solar cells)  
  81.70.Fy (Nondestructive testing: optical methods)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/2/028801       OR      https://cpl.iphy.ac.cn/Y2011/V28/I2/028801
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Articles by authors
MA Xun
LIU Zu-Ming
QU Sheng
WANG Shu-Rong
HAO Rui-Ting
LIAO Hua
[1] Chen Z M and Wang J N 2003 Basic Material Physics for Semiconductor Devices (Beijing: Beijing Science Printer) pp 106–107 313–324 (in Chinese)
[2] Capan I and Borjanovic V 2007 Solar Energy Mater. Solar Cells 91 931
[3] Lang D V 1974 J. Appl. Phys. 45 3023
[4] Johnson N M and Bartelink D J 1979 J. Appl. Phys. 50 4828
[5] Hurtes C 1978 Appl. Phys. Lett. 32 821
[6] Liu E K and Zhang B S 2002 Semiconductors Physics (Beijing: National Defense and Industry Press) pp 127 132 (in Chinese)
[7] Macdonald D and Cuevas A 2003 Phys. Rev. B 67 075203
[8] Ye L X 2009 Semiconductor Physics (Beijing: Higer Education Press) pp 245–259 (in Chinese)
[9] Shryshevsky V A and Kilchitskaya S S 2000 16th European Photovoltaic Solar Energy Conference (Glasgow, UK 1–5 May 2000) p 239
[10] Sinton R and Cuevas A 1996 Appl. Phys. Lett. 69 2510
[11] Yang D R 2007 Solar Cell Materials (Beijing: Chemistry and Industry Press) pp 156–160 (in Chinese)
[12] Macdonald D, Sinton R and Cuevas A 2001 J. Appl. Phys. 89 2772
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