Chin. Phys. Lett.  2011, Vol. 28 Issue (2): 027806    DOI: 10.1088/0256-307X/28/2/027806
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition
XIE Hai-Qing1, CHEN Yuan1, HUANG Wei-Qing1, HUANG Gui-Fang1, PENG Ping2, PENG Li2, WANG Tai-Hong1,3, ZENG Yun1,3**
1School of Physics and Microelectronics Science, Hunan University, Changsha 410082
2College of Material and Engineering, Hunan University, Changsha 410082
3Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082
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XIE Hai-Qing, CHEN Yuan, HUANG Wei-Qing et al  2011 Chin. Phys. Lett. 28 027806
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Abstract Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.
Keywords: 78.66.Hf      78.40.Fy     
Received: 25 October 2010      Published: 30 January 2011
PACS:  78.66.Hf (II-VI semiconductors)  
  78.40.Fy (Semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/2/027806       OR      https://cpl.iphy.ac.cn/Y2011/V28/I2/027806
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XIE Hai-Qing
CHEN Yuan
HUANG Wei-Qing
HUANG Gui-Fang
PENG Ping
PENG Li
WANG Tai-Hong
ZENG Yun
[1] Soni H, Chawda M and Bodas D 2009 Mater. Lett. 63 767
[2] Göde F, Gümüs C and Zor M 2007 J. Crystal Growth 299 136
[3] Yamaguchi T, Yamamoto Y, Tanaka T and Yoshida A 1999 Thin Solid Films 343–344 516
[4] Bredal M and Merikhi J 1998 J. Mater. Sci. 33 471
[5] Roy P, Ota J R and Srivastava S K 2006 Thin Solid Films 515 1912
[6] Ben Nasr T, Kamoun N and Guasch C 2001 Mater. Chem. Phys. 96 84
[7] Dhere N G 2006 Solar Energy Materials and Solar Cells 90 2181
[8] Archbold M D, Halliday D P, Durose K, Hase T P A, Boyle D S, Mazzamuto S, Romeo N and Bosio A 2007 Thin Solid Films 515 295
[9] Sambasivam S, Reddy B K, Divya A, Madhusudhana Rao N, Jayasankar C K and Sreedhar B 2009 Phys. Lett. A 373 1465
[10] Huang C M, Chen L C, Pan G T, Yang C K, Chang W S and Cheng K W 2009 Mater. Chem. Phys. 117 156
[11] Sarkar R, Tiwary C S, Kumbhakar P and Mitra A K 2009 Physica B: Condens. Matter. 404 3855
[12] Gallagher D, Hong X and Nurmikko A 1994 Phys. Rev. Lett. 72 416
[13] Qu S C, Zhou W H, Liu F Q, Chen N F and Wang Z G 2002 Appl. Phys. Lett. 80 3605
[14] Cotton F A and Wilkinson G 1980 Advanced Inorganic Chemistry (New York: Wiley-InterScience)
[15] Payne M C, Teter M P, Allan D C, Arias T A and Joannopoulos J D 1992 Rev. Mod. Phys. 64 1045
[16] Segall M D, Lindan P J D, Probert M J, Pickard C J, Hasnip P J, Clark S J and Payne M C 2002 J. Phys.: Condens. Matter. 14 2717
[17] Zhang X J, Zhao M W, He T, Li W F, Lin X H, Wang Z H, Xi Z X, Liu X D and Xia Y Y 2008 Solid State Commun. 147 165
[18] Fisher T H and Almöf J 1992 J. Phys. Chem. 96 9768
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