Chin. Phys. Lett.  2011, Vol. 28 Issue (2): 027803    DOI: 10.1088/0256-307X/28/2/027803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Photoluminescence of Nominally Undoped Heavy n-Type ZnO Nanowires
TANG Hai-Ping1,2, HE Hai-Ping3**, LIU Chao3, KWON Bong-Jun1, YE Zhi-Zhen3, LEE Soonil1, PARK Ji-Yong1***
1Division of Energy Systems Research, Ajou University, Suwon, 443-749, Korea
2Baoji University of Arts and Sciences, Baoji 721007
3State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
Cite this article:   
TANG Hai-Ping, HE Hai-Ping, LIU Chao et al  2011 Chin. Phys. Lett. 28 027803
Download: PDF(673KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract We report the identification of a donor band and the correlation between n-type conductivity and the green emission in ZnO nanowires. Temperature-dependent photoluminescence is used to investigate nominally undoped ZnO nanowires with high n-type conductivity. Within the whole temperature range, a dominant free-to-bound transition with a donor band of about 150 meV below the conduction band minimum is observed. The nanowires show very strong green emission, which is quenched with activation energy of about 220 meV. The correlation between the high n-type conductivity and the strong green emission is discussed in detail, and we suggest that they may have different origins.
Keywords: 78.55.Et      78.67.Uh      71.55.Gs     
Received: 24 November 2010      Published: 30 January 2011
PACS:  78.55.Et (II-VI semiconductors)  
  78.67.Uh (Nanowires)  
  71.55.Gs (II-VI semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/28/2/027803       OR      https://cpl.iphy.ac.cn/Y2011/V28/I2/027803
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
TANG Hai-Ping
HE Hai-Ping
LIU Chao
KWON Bong-Jun
YE Zhi-Zhen
LEE Soonil
PARK Ji-Yong
[1] Wang Z L 2004 J. Phys. Condens. Matter 16 R829
[2] Shalish I, Temkin H and Narayanamurti V 2004 Phys. Rev. B 69 245401
[3] van Dijken A, Meulenkamp E A, Vanmaekelbergh D and Meijerink A 2000 J. Phys. Chem. B 104 1715
[4] Foreman J V, Li J Y, Peng H Y, Choi S, Everitt H O and Liu J 2006 Nano Lett. 6 1126
[5] Djurisic A B, Leung Y H, Choy W C H, Cheah K W and Chan W K 2004 Appl. Phys. Lett. 84 2635
[6] He H P, Ye Z Z, Lin S S, Zhao B H, Huang J Y and Tang H P 2008 J. Phys. Chem. C 112 14262
[7] Kim D S, Richters J P, Scholz R, Voss T and Zacharias M 2010 Appl. Phys. Lett. 96 123110
[8] Makino T, Segawa Y, Yoshida S, Tsukazaki A, Ohtomo A, Kawasaki M and Koinuma H 2005 J. Appl. Phys. 98 093520
[9] Özgür Ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[10] Janotti A and van der Walle C G 2005 Appl. Phys. Lett. 87 122102
[11] Oh Y M, Lee K M, Park K H, Kim Y, Ahn Y H, Park J Y and Lee S 2007 Nano Lett. 7 3681
[12] Klingshirn C, Hauschild R, Fallert J and Kalt H 2007 Phys. Rev. B 75 115203
[13] Meyer B K, Alves H, Hofmann D M, Kriegseis W, Forster D, Bertram F, Chresten J, Hoffmann A, Strabburg M, Dworzak M, Haboeck U and Rodina A V 2004 Phys. Status Solidi B 241 231
[14] Zhang B P, Binh N T, Segawa Y, Kashiwaba Y and Haga K 2004 Appl. Phys. Lett. 84 586
[15] von Wenckstern H, Weinhold S, Biehne G, Pickenhain R, Schmidt H, Hochmuth H and Grundmann M 2005 Donor Levels in ZnO, Advances in Solid State Physics (Berlin: Springer) vol 45 p 263
[16] Voss T, Bekeny C, Gutowski J, Tena-Zaera R, Elias J, Lévy-Clément C, Mora-Seró I and Bisquert J 2009 J. Appl. Phys. 106 054304
[17] Leroux M, Grandjean N, Beaumont B, Nataf G, Semond F, Massies J and Gibart P 1999 J. Appl. Phys. 86 3721
[18] Reshchikov M A, Shahedipour F, Korotkov R Y, Wessels B W and Ulmer M P 2000 J. Appl. Phys. 87 3351
[19] Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E and Cantwell G 2002 Appl. Phys. Lett. 81 622
[20] Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 1830
[21] Zeng K C, Lin J Y, Jiang H X and Yang W 1999 Appl. Phys. Lett. 74 3821
[22] Zhang Y Z, He H P, Jin Y Z, Zhao B H, Ye Z Z and Tang H P 2008 J. Appl. Phys. 104 103529
Related articles from Frontiers Journals
[1] JIANG Wei, GAO Hong, XU Ling-Ling. Fabrication and Electrical Characteristics of Individual ZnO Submicron-Wire Field-Effect Transistor[J]. Chin. Phys. Lett., 2012, 29(3): 027803
[2] LIU Ling, XU Xiao-Liang**, LEI Jie-Mei, YIN Nai-Qiang. Nanostructured Metal-Enhanced Photoluminescence of Micro-Sr2Si5N8:Eu2+ Phosphors[J]. Chin. Phys. Lett., 2012, 29(1): 027803
[3] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 027803
[4] LIU Yan-Song, LU Hai-Fei, XU Xiao-Liang**, GONG Mao-Gang, LIU Ling, YANG Zhou . Localized Surface Plasmons Enhanced Ultraviolet Emission of ZnO Films[J]. Chin. Phys. Lett., 2011, 28(5): 027803
[5] YANG Cheng, ZHANG Gang, LEE Dae-Young, LI Hua-Min, LIM Young-Dae, YOO Won Jong**, PARK Young-Jun, KIM Jong-Min . Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications[J]. Chin. Phys. Lett., 2011, 28(3): 027803
[6] ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 027803
[7] N. J. Suthan Kissinger, G. Gnana Kumar, K. Perumal, J. Suthagar. Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films[J]. Chin. Phys. Lett., 2010, 27(5): 027803
[8] SUN Li-Jie, HE Dong-Kai, XU Xiao-Qiu, ZHONG Ze, WU Xiao-Peng, LIN Bi-Xia, FU Zhu-Xi . Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering[J]. Chin. Phys. Lett., 2010, 27(12): 027803
[9] WANG Zhi-Bing, ZHANG Hui-Chao, ZHANG Jia-Yu**, Huaipeng Su, Y. Andrew Wang. Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots[J]. Chin. Phys. Lett., 2010, 27(12): 027803
[10] ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu, SUN Jing-Chang, BIAN Ji-Ming, SUN Kai-Tong, CHEN Xi, ZHAO Jian-Ze, LI Xue, ZHU Jin-Xia,. Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates[J]. Chin. Phys. Lett., 2010, 27(1): 027803
[11] SHI Li-Bin, CHI Feng, XU Cui-Yan. A First Principles Study on mAlZn-nNO Complex Doped ZnO[J]. Chin. Phys. Lett., 2010, 27(1): 027803
[12] LI Xiang-Ping, ZHANG Bao-Lin, GUAN He-Song, SHEN Ren-Sheng, PENG Xin-Cun, ZHENG Wei, XIA Xiao-Chuan, ZHAO Wang, DONG Xin, DUGuo-Tong,. Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD[J]. Chin. Phys. Lett., 2009, 26(9): 027803
[13] LI Sheng-Tao, YANG Yan, ZHANG Le, CHENG Peng-Fei, LI Jian-Ying. Effect of Tunneling Current on Schottky Barrier Height in ZnO Varistors at Low Temperature[J]. Chin. Phys. Lett., 2009, 26(7): 027803
[14] ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu, SUN Jing-Chang, BIAN Ji-Ming, LIANG Hong-Wei, HUO Bing-Zhi, YU Dong-Qi, CHEN Xi, FU Qiang. Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates[J]. Chin. Phys. Lett., 2009, 26(5): 027803
[15] YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao,. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 027803
Viewed
Full text


Abstract