| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature and Composition Dependence of GaNxAs1−x(0 < x ≤ 0.05) before and after Annealing |
| ZHAO Chuan-Zhen1**, LI Na-Na2, WEI Tong3, TANG Chun-Xiao1
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1School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin 300160
2School of Textiles, Tianjin Polytechnic University, Tianjin 300160
3College of Science, Civil Aviation University of China, Tianjin 300300
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| Cite this article: |
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ZHAO Chuan-Zhen, LI Na-Na, WEI Tong et al 2011 Chin. Phys. Lett. 28 127801 |
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Abstract The parameters in the band-anticrossing model for GaNxAs1−x (0 < x ≤ 0.05) are obtained considering the effect of temperature and composition. It is found that the effect of composition on the N levels in the band-anticrossing model is weak. The temperature dependence of the N levels and the temperature dependence of the band gap energy of GaNAs are weaker than that of GaAs. In addition, the reason for a spectral blueshift and the effect of annealing on the parameters in the band-anticrossing model are also discussed.
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| Keywords:
78.20.-e
78.20.Bh
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Received: 08 July 2011
Published: 29 November 2011
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| PACS: |
78.20.-e
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(Optical properties of bulk materials and thin films)
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78.20.Bh
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(Theory, models, and numerical simulation)
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[1] Shan W, Walukiewicz W, Ager III J W, Haller E E, Geisz J F, Friedman D J, Olson J M and Kurtz S R 1999 Phys. Rev. Lett. 82 1221
[2] Wu J, Shan W and Walukiewicz W, 2002 Semicond. Sci. Technol. 17 860
[3] Klar P J, Grüning H, Heimbrodt W, Koch J, Höhnsdorf F, Stolz W, Vicente P M A and Camassel J 2000 Appl. Phys. Lett. 76 3439
[4] Ben Bouzid S, Bousbih F, Chtourou R and Tounié E 2004 Solid State Commun. 130 121
[5] Uesugi K, Suemune I, Hasegawa T, Akutagawa T and Nakamura T 2000 Appl. Phys. Lett. 76 1285
[6] Plaza J, Castaño J L, García B J, Carrère H and Bedel-Pereira E 2005 Appl. Phys. Lett. 86 121918
[7] Shan W, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Geisz J F, Friedman D J, Olson J M, Kurtz S R, Xin H P and Tu C W 2001 Phys. Stat. Sol. (b). 223 75
[8] Tan P H, Xu Z Y, Luo X D, Ge W K, Zhang Y, Mascarenhas A, Xin H P and Tu C W 2007 Appl. Phys. Lett. 90 061905
[9] Tan P H, Luo X D, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P, Tu C W and Ge W K 2006 Phys. Rev. B 73 205205
[10] Francoeur S, Seong M J, Hanna M C, Geisz J F, Mascarenhas A, Xin H P and Tu C W 2003 Phys. Rev. B 68 075207
[11] Merrick M, Cripps S A, Murdin B N, Hosea T J C, Veal T D and McConville C F 2007 Phys. Rev. B 76 075209
[12] Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
[13] Kraisingdecha P, and Gal M 1996 Appl. Phys. Lett. 69 1355
[14] Uesugi K, Marooka N and Suemune I 1999 Appl. Phys. Lett. 74 1254
[15] Bhat R, Caneau C, Salamanca-Riba L, Bi W and Tu C 1998 J. Crys. Growth. 195 427
[16] Malikova L, Pollak F H, and Bhat R 1998 J. Electron. Mater. 27 484
[17] Kudrawiec R, Sek G, Misiewicz J, Li L H and Harmand J C 2004 Solid State Commun. 129 353
[18] Keyes B M, Geisz J F, Dippo P C, Reedy R, Kramer C, Friedman D J, Kurtz Sarah R and Olson J M 1999 AIP Conf. Proc. 462 511
[19] Zhao C Z, Zhang R, Liu B, Yu L Y, Tang C X, Xie Z L, Xiu X Q and Zheng Y D 2011 Sci. China. Ser. G 54 2160
[20] Vurgaftman I, Meyer J R and Ram and Mohan L R 2001 J. Appl. Phys. 89 5815
[21] Rubel O, Volz K, Torunski T, Baranovskii S D, Grosse F, and Stolz W 2004 Appl. Phys. Lett. 85 5908
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