| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Surface Potential Equation for Metal-Oxide-Semiconductor Capacitors Considering the Degenerate Effect |
| ZHANG Da, SUN Jiu-Xun**, PU Jin-Rong
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| Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 |
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| Cite this article: |
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ZHANG Da, SUN Jiu-Xun, PU Jin-Rong 2011 Chin. Phys. Lett. 28 127303 |
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Abstract A surface potential equation (SPE) considering the degenerate effect is derived. To make the degenerate SPE analysis, an empirical approximation for the Fermi integral is applied in the derivation. Dependences of surface potential and square of electric field on gate voltage calculated from the degenerate and non-degenerate models are compared with great discrepancy. Further, theoretical C–V relationships are compared with the experimental data for two structures and it is shown that the degenerate SPE−based Cg–Vg matches with the experimental data much better than the non-degenerate one, which confirms that the degenerate effect is inevitable for surface potential-based metal-oxide-semiconductor device modeling.
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| Keywords:
73.20.At
85.30.Tv
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Received: 19 July 2011
Published: 29 November 2011
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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85.30.Tv
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(Field effect devices)
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