| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A [111]-Cut Si Hemisphere Two-Photon Response Photodetector |
| LIU Xiu-Huan1, CHEN Zhan-Guo2**, JIA Gang2, WANG Hai-Yan1, GAO Yan-Jun2, LI Yi1
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1College of Communication Engineering, Jilin University, Changchun 130012
2State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
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| Cite this article: |
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LIU Xiu-Huan, CHEN Zhan-Guo, JIA Gang et al 2011 Chin. Phys. Lett. 28 114202 |
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Abstract Properties of two-photon response in a [111]-cut nearly-intrinsic Si hemisphere photodetector are studied. The measured photocurrent of the photodetector responding to the 1.32 µm continuous wave laser shows a quadratic dependence on the coupled optical power and is saturated with the bias voltage. Also, the photocurrent is independent of polarization. Such properties are in good agreement with the theory of two−photon absorption. The isotropic photocurrent generated from the [111]-cut Si hemisphere is compared to the anisotropic one induced in the [110]-cut Si sample and the ratio of χxxxx /χxxyy for silicon performing at 1.32 µm is calculated to be 2.4 via the fitted function of the anisotropic photocurrent from the [110]-cut sample.
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| Keywords:
42.65.-k
72.40.+w
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Received: 24 August 2011
Published: 30 October 2011
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| PACS: |
42.65.-k
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(Nonlinear optics)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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