| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tunneling Processes in Optically Excited Quantum Dots |
| LI Xiu-Ping1, WEI Hua-Rong1, XU Li-Ping2, GONG Jian-Ping3, YAN Wei-Xian1
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1College of Physics and Electronics, Shanxi University, Taiyuan 030006
2Department of Physics, North University of China, Taiyuan 030051
3Department of Physics, Jinzhong University, Yuci 030600
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| Cite this article: |
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LI Xiu-Ping, WEI Hua-Rong, XU Li-Ping et al 2011 Chin. Phys. Lett. 28 107306 |
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Abstract The single-electron tunneling processes in optically excited coupled quantum dots can be divided into two parts: the electron and the hole parts, which are analytically obtained in the framework of the Keldysh formalism. The tunneling process is selective tunneling, which results in dark tunneling states. The tunneling currents are co-determined by the resonance energies and probability distributions of the particular quantum channels defined by the electron-hole complex resonant states.
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| Keywords:
73.23.Hk
71.35.-y
85.35.Be
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Received: 27 March 2011
Published: 28 September 2011
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| PACS: |
73.23.Hk
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(Coulomb blockade; single-electron tunneling)
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71.35.-y
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(Excitons and related phenomena)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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