Chin. Phys. Lett.  2011, Vol. 28 Issue (10): 107305    DOI: 10.1088/0256-307X/28/10/107305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Neutrino-Electron Scattering and the Little Higgs Models
LI Na, YUE Chong-Xing**, LI Xu-Xin
Department of Physics, Liaoning Normal University, Dalian 116029
Cite this article:   
LI Na, YUE Chong-Xing, LI Xu-Xin 2011 Chin. Phys. Lett. 28 107305
Download: PDF(467KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The neutrino-electron scattering process is sensitive to the standard model (SM) and the new physics beyond the SM. We calculate the corrections of the littlest Higgs model and the SU(3) simple group model to the νe e scattering cross section. Using the LSND experimental measured values, we obtain the bounds on the relevant free parameters, which might be compatible with those from the electroweak precision data.
Keywords: 73.40.Lq      72.80.Ga      81.15.Cd     
Received: 02 July 2011      Published: 28 September 2011
PACS:  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  72.80.Ga (Transition-metal compounds)  
  81.15.Cd (Deposition by sputtering)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/28/10/107305       OR      https://cpl.iphy.ac.cn/Y2011/V28/I10/107305
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LI Na
YUE Chong-Xing
LI Xu-Xin
[1] Hooft G 1971 Phys. Lett. B 37 195
[2] itarciano W J and Parsa Z J 2003 Phys. G 29 2629
de Gouvea A and Jenkins J 2006 Phys. Rev. D 74 033004
[3] Auerbach L B et al 2001 Phys. Rev. D 63 112001
[4] Bardin D Y, Bilenky S it and Pontecorvo B 1970 Phys. Lett. B 32 68
Vogel P and Engel J 1989 Phys. Rev. D 39 3378
[5] Barranco J, itiranda O G, itoura C A and Valle J W F 2006 Phys. Rev. D 73 113001
Barranco J, itiranda O G, itoura C A and Valle J W F 2008 Phys. Rev. D 77 093014
[6] Khan A N and Tahir F 2011 arXiv:1101.3191 [hep-ph]
Khan A N and Tahir F 2011 arXiv:1102.1869 [hep-ph]
[7] Barranco J, itiranda O G and Rashba T I 2008 Phys. Lett. B 662 431
[8] Barranco J, Bolanos A, itiranda O G, itoura C A and Rashba T I 2009 Phys. Rev. D 79 073011
Deniz it et al [TEXONO Collaboration] 2010 Phys. Rev. D 82 033004
[9] Ettefaghi it it and Shakouri T 2010 J. High Energy Phys. 1011 131
[10] Adaits T et al [NuSOnG Collaboration] 2009 Int. J. itod. Phys. A 24 671
Ong J F and Jalil I A 2011 arXiv:1103.5273 [hep-ph]
[11] Schitaltz it and Tucker-Sitith D 2005 Ann. Rev. Nucl. Part. Sci. 55 229
Perelstein it 2007 Prog. Part. Nucl. Phys. 58 247
[12] Han T, Logan H E and Wang L T 2006 J. High Energy Phys. 0601 099
[13] Kaplan D E and Schitaltz it 2003 J. High Energy Phys. 0310 039
[14] Arkani-Haited N, Cohen A G, Katz E and Nelson A E 2002 J. High Energy Phys. 0207 034
[15] Schitaltz it 2004 J. High Energy Phys. 0408 056
[16] Hewett J L, Petriello F J and Rizzo T G 2003 J. High Energy Phys. 0310 062
Csaki C, Hubisz J, Kribs G D, Itaede P and Terning J 2003 Phys. Rev. D 68 035009
Chen it C and Dawson S 2004 Phys. Rev. D 70 015003
Killian W and Reuter J 2004 Phys. Rev. D 70 015004
Yue C X and Wang W 2004 Nucl. Phys. B 683 48
Hubisz, Itaeda P, Noble A et al 2006 J. High Energy Phys. 0601 135
Dias A G, de Pires C A S and Rodrigues da Silva P S 2008 Phys. Rev. D 77 055001
[17] Han Z and Skiba W 2005 Phys. Rev. D 72 035005
Itarandella G, Schappacher C and Struitia A 2005 Phys. Rev. D 72 035014
[18] Han T, Logan H E, itcElrath B and Wang L T 2003 Phys. Rev. D 67 095004
[19] Yao W it et al [Particle Data Group] 2006 J. Phys. G 33 1 and partial update for the 2008 edition
[20] del Aguila F, Illana J I and Jenkins it D 2011 J. High Energy Phys. 1103 080
Related articles from Frontiers Journals
[1] GAO Jun-Ning,JIE Wan-Qi**,YUAN Yan-Yan,ZHA Gang-Qiang,XU Ling-Yan,WU Heng,WANG Ya-Bin,YU Hui,ZHU Jun-Fa. In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction[J]. Chin. Phys. Lett., 2012, 29(5): 107305
[2] WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 107305
[3] ZHU Yun, WANG Yue, WAN Peng-Fei, LI Hong-Yu, WANG Shou-Yu. Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method[J]. Chin. Phys. Lett., 2012, 29(3): 107305
[4] LI Shao-Juan, HE Xin, HAN De-Dong, SUN Lei, WANG Yi, HAN Ru-Qi, CHAN Man-Sun, ZHANG Sheng-Dong, **. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(1): 107305
[5] WU Wen-Juan**, WANG Zhan-Shan, ZHU Jing-Tao, ZHANG Zhong, WANG Feng-Li, CHEN Ling-Yan, ZHOU Hong-Jun, HUO Tong-Lin . Spectral Resolution Improvement of Mo/Si Multilayers[J]. Chin. Phys. Lett., 2011, 28(8): 107305
[6] C. K. Sumesh**, K. D. Patel, V. M. Pathak, R. Srivastav . Current Transport in Copper Schottky Contacts to a−Plane/ c−Plane n-Type MoSe2[J]. Chin. Phys. Lett., 2011, 28(8): 107305
[7] JIN Ke-Xin**, LUO Bing-Cheng, ZHAO Sheng-Gui, WANG Jian-Yuan, CHEN Chang-Le . Leakage Current and Photovoltaic Properties in a Bi2Fe4O9/Si Heterostructure[J]. Chin. Phys. Lett., 2011, 28(8): 107305
[8] WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong**, LIU Ming . CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 107305
[9] DUAN Li**, GAO Wei . Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering[J]. Chin. Phys. Lett., 2011, 28(3): 107305
[10] ZHAO Geng, CHENG Xiao-Man, **, TIAN Hai-Jun, DU Bo-Qun, LIANG Xiao-Yu . Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer[J]. Chin. Phys. Lett., 2011, 28(12): 107305
[11] HUANG Jian**, WANG Lin-Jun, TANG Ke, XU Run, ZHANG Ji-Jun, LU Xiong-Gang, XIA Yi-Ben . Photoresponse Properties of an n-ZnS/p-Si Heterojunction[J]. Chin. Phys. Lett., 2011, 28(12): 107305
[12] FAN Hui-Jie, ZHANG Hui-Qiang, WU Jing-Jing, WEN Zheng-Fang, MA Feng-Ying** . Photovoltaic Behaviors in an Isotype n-TiO2/n-Si Heterojunction[J]. Chin. Phys. Lett., 2011, 28(12): 107305
[13] WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. Chin. Phys. Lett., 2011, 28(12): 107305
[14] HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing**, WANG Yong-Sheng . Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering[J]. Chin. Phys. Lett., 2011, 28(12): 107305
[15] XU Jia-Xiong, YAO Ruo-He*, LIU Yu-Rong . Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature[J]. Chin. Phys. Lett., 2011, 28(10): 107305
Viewed
Full text


Abstract