| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reproduced Giant Localization Length of Two-Side Surface Disordered Nanowires with Long-Range Correlation |
| ZHAO Wei**, DING Jian-Wen
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Department of Physics & Institute for Nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan 411105
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| Cite this article: |
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ZHAO Wei, DING Jian-Wen 2011 Chin. Phys. Lett. 28 107102 |
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Abstract We numerically investigate the normalized localization length of two-side rough nanowires as functions of energy, magnetic field and correlation strength by using modular recursive Green's function method. It is found that in the absence of correlation, while in the presence of magnetic field, the localization length increases linearly for two-side roughness, which is different to diverging exponentially for one-side roughness. Moreover, the localization of electrons is suppressed in the low energy region, but enhanced in the high energy region. In the presence of correlation, especially, an exponential enhancement in the localization length resumes in high energy region, in contrast to that in low energy region, the long-range correlations abnormally enhance the localization of electrons. A competitive mechanism is proposed to explain this behavior.
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| Keywords:
71.30.+h
72.15.Rn
73.20.Jc
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Received: 19 February 2011
Published: 28 September 2011
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| PACS: |
71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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73.20.Jc
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(Delocalization processes)
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