| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics2010- |
| ZHANG Guang-Chen1, FENG Shi-Wei1**, HU Pei-Feng1, ZHAO Yan2, GUO Chun-Sheng1, XU Yang1, CHEN Tang-Sheng3, JIANG Yi-Jian2
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1School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124
2Institute of Laser Engineering, Beijing University of Technology, Beijing 100124
3Nanjing Electronic Devices Institute, Nanjing 210016
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| Cite this article: |
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ZHANG Guang-Chen, FENG Shi-Wei, HU Pei-Feng et al 2011 Chin. Phys. Lett. 28 017201 |
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Abstract Channel temperature measurements of multi-finger AlGaN/GaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter (TSP) by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-dimensional heat conduction model, the physical meaning of the channel temperature for AlGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.
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| Keywords:
72.80.Ey
78.30.Fs
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Received: 17 May 2010
Published: 23 December 2010
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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78.30.Fs
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(III-V and II-VI semiconductors)
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